Participants: EPFL (Sub-coordinator), IF-PAN, URV, FEE, CSIC
Objectives:
The main objectives of WP 2 are (i) to develop technologies for the preparation of highly specialized active elements, including nano-crystalline laser materials, diffusion bonded structures, epitaxially grown thin films, planar and channel waveguides, and photonic band-gap waveguides, (ii) the optical and spectroscopic investigation of these novel structures and (iii) the comparison of their properties with those of the bulk counterparts of WP 1 with respect to the potential for realization of compact, highly efficient laser devices.
Description of work:
Nano-crystalline double tungstates will be grown by the sol-gel method at IF-PAN and URV. These samples will be investigated spectroscopically with respect to the grain size and the results will be compared to the bulk counterparts investigated in WP 1. Thermal treatment after optical contact for specialized and composite structures and processing technologies will be the priority of FEE. Liquid-phase epitaxial growth for superior element designs for diode pumping (EPFL and URV) and micro- and nano-structuring to achieve channel and photonic-band-gap waveguides (EPFL) will be performed. Interface characterization of epitaxial layers is planned at EPFL and URV, and optical and spectroscopic studies of doped waveguides – at CSIC. First nano-crystalline and photonic band-gap experiments on stimulated emission will be performed at IF-PAN and EPFL, in close collaboration with MBI.